pc2100 ddr sdram

Brand Name:NCR

Model Number:009-0019311

Place of Origin:China

SPECIFICATION P/N 009-0019311 Brand NCR Keyword ATM Machine ATM Parts Used in ATM Machine Delivery time 1-7 working days Shipment by express / sea / air Payment TT / Western Union / Paypal / Money Gram Condition new/ used Warranty 90 days Other service ...

Brand Name:SAMSUNG

Model Number:K4B4G1646E-BYMA

Place of Origin:KOREAN

DDR SDRAM K4B4G1646E-BYMA K4B4G1646E-BYMA Manufacturer Samsung MFR.Part #K4B4G1646E-BYMA JLCPCB Part #C500275 PackageFBGA-96 DescriptionFBGA-96 DDR SDRAM ROHS Datasheet Download SourceJLCPCB Assembly Type SMT Assembly CAD ModelPCB Footprint or Symbol ...

Brand Name:TE Connectivity AMP Connectors

Model Number:1-1473005-1

Place of Origin:China

...DDR SDRAM Socket Details : 200 Position SODIMM DDR SDRAM Socket Surface Mount, 25° Angle Description: CONN SKT SODIMM 200POS SMD IC Category Connectors, Interconnects 　Series Memory Connectors - Inline Module Sockets MFG 　 TE Connectivity AMP Connectors 　Part number 1-1473005-1 Package 　 Tray Part Status Active Connector Style SODIMM Number of Positions 200 Memory Type DDR

Brand Name:Micron Technology

Model Number:MT29PZZZ8D5WKFMW-18W.6D

MT29PZZZ8D5WKFMW-18W.6D - 1GB DDR SDRAM Find information here in stock.xlsx Introduction: The MT29PZZZ8D5WKFMW-18W.6D is a 1GB DDR SDRAM module designed for use in a variety of computing and memory-intensive applications. It features a high level of ...

Brand Name:Anterwell

Model Number:MT46V8M16

Place of Origin:original factory

...DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate (DDR...

Model Number:MT46V8M16

Place of Origin:original factory

...DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate (DDR...

Brand Name:MICRON

Model Number:MT46V16M16P-75:F

Place of Origin:CHINA

Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No DRAM Type DDR SDRAM Chip Density (bit) 256M Organization 16Mx16 Number of Internal Banks 4 Number of Words per Bank 4M Number of Bits/Word (bit) ...

Brand Name:NCR

Model Number:0090022375

Place of Origin:GUA

...DDR DRAM PC2100 009-0022375 0090022375 Specifications 1. Good quality 2. Competitive price. 3. Prompt delivery 4. Accept small order. Product Description Brand NCR PN 009-0022375 Type red or grey rubber Package Suitable safe carton MOQ 5 PCS use in NCR DIMM 512M 64MX64 DDR DRAM PC2100 quality New PN2 0090022375 product description Bank ATM Machine Parts NCR DIMM 512M 64MX64 DDR DRAM PC2100...

Place of Origin:China

Brand Name:NCR

ATM Parts NCR DIMM 512M 64MX64 DDR DRAM PC2100 009-0022375 Product details Part number 009-0022375 Brand NCR Description DIMM 512M 64MX64 DDR DRAM PC2100 Quality new original refurbished Warranty 90 days Trade term EXW (100% Prepayment) Payment T/T or ...

Brand Name:Micron Technology Inc.

Model Number:MT41K256M16TW-107 AIT:P

Place of Origin:Multi-origin

...-64 Product Status Active Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz ...

Brand Name:Samsung

Model Number:K4A4G165WF-BCTD

Place of Origin:TH/CN/PH

Samsung K4A4G165WF-BCTD FBGA-96 DDR SDRAM Memory IC Memory IC is an integrated circuit that is designed to store data and program code. It typically includes a range of components, such as memory cells, address decoders, and sense amplifiers. Memory IC ...

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:K TR

Place of Origin:CHINA

MT46V16M16P-5B:K TR 46V16M16 SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP List Of Other Electronic Components In Stock TLE6250PGV33 ...

Model Number:LP2998MA/NOPB

... specifications for termination of DDR-SDRAM and DDR2 memory. The device also supports DDR3 and DDR3L VTT bus termination with VDDQ min of 1.35 V. The device contains a high-...

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:M

SDRAM - DDR Memory IC MT46V16M16P-5B:M 256Mbit Parallel 200 MHz 700 Ps 66-TSOP Electronic IC Chip ...

Brand Name:Horexs

Model Number:HRX

Place of Origin:CHINA

... device-.Power/Analog IC drive-Control drive IC for portable electronic device;-PDA-Wireless RF-Memory (DDR SDRAM)-Cell phone-Workstation, Server, Video Camera -Desktop PC, Note book PC

Model Number:97-0284

...SDRAM- PC100 SD 8Mx16-10 FBGA lead free EDS1216GABH-10-E Elpida 20000 booking SD 2Mx8-8 PC125 CL3 TSOP HY57V168010DTC-8 Hynix 3000 3 days SD 8Mx32-PC100 EDS2532AABH-1AR2-E Elpida 100000 booking DDR-400 DDR SDRAM 4M x 32 EM6A9320BI-5MG ETRONTEC 25780 SZ STOCK DDR 64Mx8 PC400 Pb Free MT46V64M8P-5B:F Micron 10000 1 day DDR 64Mx8 PC400 K4H510838G-LCCC Samsung 10000 Stock HK DDR...

Brand Name:Micron Technology Inc.

Model Number:MT46V32M16P-5B:J TR

...architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clockcycle data transfer at the internal DRAM core and two

Brand Name:SKHYNIX

Model Number:H9HCNNNBPUMLHR- NMO

Place of Origin:KOREA

... devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR SDRAM, also known as mDDR (Mobile DDR SDRM), is a communication standard developed by the US JEDEC Solid State Technology Association (JEDEC Solid State Technology Association) for low

Brand Name:TOPCBS

Model Number:DDR Socket PCB

Place of Origin:Suzhou China

...DDR concept. The demand for higher data rates and larger data densities lead to the evolution of SDR into the DDR. In the DDR SDRAM, the data is clocked at both edges – positive as well as negative edge – which results in doubling the data rate. In this way, DDR achieves greater