ldmos transistor

Place of Origin:PHILIPPINE

Model Number:BLC6G22-75

BLC6G22-75 is a Power LDMOS transistor. Part NO: BLC6G22-75 Brand: Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:NENGXUN

Model Number:10W 1550-1620MHz

Place of Origin:CHINA

Description Introducing the 10W 1550-1620MHz LDMOS Anti-Drone RF Module Protecting your airspace has never been easier with our state-of-the-art 10W 1550-1620MHz LDMOS Anti-Drone RF Module. Designed to shield against unwanted UAV intrusions, this device...

Brand Name:Freescale

Model Number:MRFE6VP6300HR5

Place of Origin:USA

MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ...

Brand Name:Texas Instruments

Model Number:TPS62141RGTR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light ...

Brand Name:MICRON

Model Number:M25P10-AVMN6TP

Place of Origin:original

M25P10-AVMN6TP Chipscomponent Electronic Components IC Chips 1Mb SPI 50 MHz 8 ns 8- so Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series M25P10-AVMN6TP Reference Type Series Output Type Fixed Voltage - Output (Min/Fixed) 10V Current - ...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Place of Origin:Original

BLP05H635XRY Specifications Part Status Active Transistor Type LDMOS (Dual), Common Source Frequency 108MHz Gain 27dB Voltage - Test 50V Current Rating - Noise Figure - Current - ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

...transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS...

Model Number:BLF9G38-10GU

... to innovation, Ampleon offers a comprehensive portfolio of LDMOS and GaN RF power transistors designed to meet the demanding requirements of various industries, including mobile broadband, broadcast, industrial, scientific, medical, aerospace, and

Model Number:BLF8G20LS-400PV

Place of Origin:Malaysia

Brand Name:KAIGENG

BLF8G20LS-400PV N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF8G20LS-400PV #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;...

Brand Name:Original brand

Model Number:STM32F765ZIT6

Place of Origin:China

... Sensor use IC Chips IC FPGA 102 I/O 144TQFP IC Chips RF Amplifier 750/860 MHz Transistor RF Mosfet LDMOS (Dual) Transistor RF power transistor TO pkg Power Module IGBT Module Half Bridge 1200V 200A 1130W Module 5.8G Wireless Audio Video ...

Categories:Integrated Circuits ICs

Country/Region:china

...transistor manufactured by NXP, specifically designed for high-power RF applications. Here are the detailed specifications of this product: Basic Parameters Product Type: RF MOSFET Transistors (Radio Frequency Metal-Oxide-Semiconductor Field-Effect Transistors) Manufacturer: NXP Polarity: N-Channel Package: SOT1787 Technology: LDMOS...