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IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip

Categories IGBT Power Module
Brand Name: onsemi
Model Number: NGTB40N120SWG
MOQ: Negotiable
Price: Negotiable
Payment Terms: T/T, D/P, D/A, L/C, Western Union, MoneyGram
Supply Ability: Available Quantity 30000 Pieces
Delivery Time: Negotiable
Product Model: NGTB40N120SWG
Supplier Package: TO-247-3
Brief Description: Insulated Gate Bipolar Transistor
Product Category: IGBT Power Module
Application Areas: Welding
Date Of Manufacture: Within A Year
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IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip

Product Range
  • Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip

App Characteristics

  • TJmax = 175°C • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 10 us Short Circuit Capability
  • These are Pb−Free Devices
Basic Data
Product AttributeAttribute Value
onsemi
Product Category:IGBT Transistors
RoHS:Details
Si
TO-247-3
Through Hole
Single
1.2 kV
2 V
20 V
80 A
535 W
- 55 C
+ 175 C
Tube
Brand:onsemi
Continuous Collector Current Ic Max:40 A
Gate-Emitter Leakage Current:200 nA
Product Type:IGBT Transistors
30
Subcategory:IGBTs
Unit Weight:1.340411 oz
DOWNLOAD DATASHEET
Application
  • Widely used in stage, concert, network communication,Smartphones Tablets Laptops Notebooks Power Adapters Cameras Dongle
Order Process

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Chip Diagram

Product Tags:

NGTB40N120SWG

  

IGBT Power Transistors

  
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