silicon npn power transistor

Brand Name:NEC

Model Number:2SC2987

Place of Origin:JAPAN

2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Place of Origin:US

Brand Name:Original

Model Number:2SC2026

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Place of Origin:USA

Brand Name:FAIRCHILD

Model Number:2SC2073

... Part Number: 2SC2073 Manufacturer / Brand: FAIRCHILD Brief Description: Silicon NPN Power Transistors TO-220 Quantity Available: 32, 800 Pieces Unit Price: USD 0.50 each D/C (Date Code): 2013+NEWEST DATE ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:A42

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ...

Model Number:EB102

Place of Origin:china

Key Specifications/Special Features: Voltage: 400V Current: 0.4A Power: 8W Low switching losses Low reverse leakage currents Good high-temperature properties Right switching speeds High reliabilities

Brand Name:Original

Model Number:MMBT5551

...NPN General-Purpose Amplifier MMBT5550LT1 High Voltage Transistor NPN Silicon SOT-23 - Power Transistor and Darlingtons Part number BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551 Electrical Characteristics Mfr. # MMBT5551 Mounting Style SMD/SMT Transistor

Brand Name:TOSHIBA

Model Number:2SC5171

Place of Origin:Original Factory

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1930 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. ...

Place of Origin:Italy

Brand Name:ST

Model Number:BD236

Type:POWER TRANSISTORS 1.COMPLEMENTARY PNP - NPN DEVICES 2.STMicroelectronics PREFERRED SALESTYPES POWER TRANSISTORS-Description TRANSISTOR, NPN, TO-220 Transistor Polarity:NPN Collector Emitter Voltage V(br)ceo:60V Gain Bandwidth ft Typ:2MHz Power ...

Place of Origin:Guangxi

Brand Name:GSME

Model Number:2SC2073

...NPN TO-220 Silicon Power Transistors- - MAXIMUM RATINGS Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCBO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 mA Base Current IB 0.5 mA Collector Power Dissipation PC ...

Place of Origin:Taiwan

Brand Name:SR;NXP

...NPN Switching Transistor Band:SR;NXP 3 years warranty Free samples for testing FEATURES · High power gain · Low noise figure · High transition frequency · Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor...

Brand Name:SEMTECH

Place of Origin:China (mainland)

Model Number:MMBT3904E

Key Specifications/Special Features: NPN general purpose transistor Super mini package SOT-523 High reliability MOQ: 4,000 to 32,000 pieces Delivery lead time: 21 to 30 days Used for switching and amplifier applications Primary Competitive Advantages: ...

Place of Origin:Taiwan

... and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @ VCE = 10 V,

Brand Name:Kexin, Kesenes

Place of Origin:China (mainland)

Model Number:2SD1622-T-TC SOT-89

Key Specifications/Special Features: Adoption of FBET process Very small size making it easy to provide high density hybrid IC’s Collector-emitter voltage: 50V hFE: 200 - 400 Primary Competitive Advantages: Brand-name Parts Country of Origin Experienced ...

Place of Origin:China

Technical parameters: 1. Wafer Diameter: 100mm 2. Wafer thickness: 245¡ À 5¦ Ì m 3. Back Metal thickness: Ti 1000A+ Ni 4000A+ Ag 5000A 4. Front Metal thickness: pure Al 4.5¦ Ì m 5. Wafer surface passivation: Silicon Nitride 6000A 6. Scribe width: 60¦ Ì m 7...

Place of Origin:China

Brand Name:DHA

Model Number:BU941 die chip on wafer

...NPN Power Darlington Transistor Chip BU941Z Technical parameters: 1. Wafer Diameter: 100mm 2. Wafer thickness: 245±5μm 3. Back Metal thickness: Ti 1000A + Ni 4000A + Ag 5000A 4. Front Metal thickness: pure Al 4.5μm 5. Wafer surface passivation: Silicon Nitride 6000A 6. Scribe width: 60μm 7. Chip area: 4.7×4.7(mm) 8. Transistor...

Brand Name:CviLux

Model Number:MMBT3904

Place of Origin:china

Key Specifications/Special Features: NPN general purpose switching transistor Voltage: 40V Power: 225mW Special features: NPN epitaxial silicon, planar design Collector-emitter voltage VeE: 40V Collector current Ie: 200mA Transition frequency fr >300MHz...

Place of Origin:China

Brand Name:DHA

Model Number:BU941 die chip on wafer

...NPN Power Darlington Transistor Chip BU941Z Technical parameters: 1. Wafer Diameter: 100mm 2. Wafer thickness: 245±5μm 3. Back Metal thickness: Ti 1000A + Ni 4000A + Ag 5000A 4. Front Metal thickness: pure Al 4.5μm 5. Wafer surface passivation: Silicon Nitride 6000A 6. Scribe width: 60μm 7. Chip area: 4.7×4.7(mm) 8. Transistor...

Brand Name:Sinyork

Model Number:BC817 SERIES

Place of Origin:china

Key Specifications/Special Features: Voltage: 45V Power: 225mW General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC: 500mA Pb-free product are available (99% Sn above can meets RoHS environment substance ...