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Total 267 products from silicon npn power transistor Manufactures & Suppliers |
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Brand Name:NEC Model Number:2SC2987 Place of Origin:JAPAN 2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Place of Origin:MALAYSIA Brand Name:MOTOROLA Model Number:MRW53601 MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ... |
Mega Source Elec.Limited
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Place of Origin:US Brand Name:Original Model Number:2SC2026 Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
Guangdong |
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Brand Name:ONSEMI Model Number:BD135 Place of Origin:Original BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ... |
Anterwell Technology Ltd.
Guangdong |
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Place of Origin:USA Brand Name:FAIRCHILD Model Number:2SC2073 ... Part Number: 2SC2073 Manufacturer / Brand: FAIRCHILD Brief Description: Silicon NPN Power Transistors TO-220 Quantity Available: 32, 800 Pieces Unit Price: USD 0.50 each D/C (Date Code): 2013+NEWEST DATE ... |
EIS LIMITED (Excellent Integrated System LIMITED)
HongKong |
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Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:A42 SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ... |
Otomo Semiconductor Technology (Shenzhen) Co., Ltd
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Model Number:EB102 Place of Origin:china Key Specifications/Special Features: Voltage: 400V Current: 0.4A Power: 8W Low switching losses Low reverse leakage currents Good high-temperature properties Right switching speeds High reliabilities |
Shenzhen Shengyuan Semiconductors Co. Ltd
Guangdong |
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Brand Name:Original Model Number:MMBT5551 ...NPN General-Purpose Amplifier MMBT5550LT1 High Voltage Transistor NPN Silicon SOT-23 - Power Transistor and Darlingtons Part number BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551 Electrical Characteristics Mfr. # MMBT5551 Mounting Style SMD/SMT Transistor |
LU'S TECHNOLOGY CO., Ltd.
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Brand Name:TOSHIBA Model Number:2SC5171 Place of Origin:Original Factory 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1930 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Place of Origin:Italy Brand Name:ST Model Number:BD236 Type:POWER TRANSISTORS 1.COMPLEMENTARY PNP - NPN DEVICES 2.STMicroelectronics PREFERRED SALESTYPES POWER TRANSISTORS-Description TRANSISTOR, NPN, TO-220 Transistor Polarity:NPN Collector Emitter Voltage V(br)ceo:60V Gain Bandwidth ft Typ:2MHz Power ... |
Shenzhen Hengjia Technology Co., Ltd.
Guangdong |
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Place of Origin:Guangxi Brand Name:GSME Model Number:2SC2073 ...NPN TO-220 Silicon Power Transistors- - MAXIMUM RATINGS Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCBO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 mA Base Current IB 0.5 mA Collector Power Dissipation PC ... |
Guilin Huasheng Micro-Electronics Co., Ltd.
Guangxi |
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Place of Origin:Taiwan Brand Name:SR;NXP ...NPN Switching Transistor Band:SR;NXP 3 years warranty Free samples for testing FEATURES · High power gain · Low noise figure · High transition frequency · Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor... |
SinceRity Technology Co.,Ltd
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Brand Name:SEMTECH Place of Origin:China (mainland) Model Number:MMBT3904E Key Specifications/Special Features: NPN general purpose transistor Super mini package SOT-523 High reliability MOQ: 4,000 to 32,000 pieces Delivery lead time: 21 to 30 days Used for switching and amplifier applications Primary Competitive Advantages: ... |
Sino-Tech International (BVI) Limited
Hong Kong |
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Place of Origin:Taiwan ... and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @ VCE = 10 V, |
SinceRity Technology Co., Ltd
Guangdong |
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Brand Name:Kexin, Kesenes Place of Origin:China (mainland) Model Number:2SD1622-T-TC SOT-89 Key Specifications/Special Features: Adoption of FBET process Very small size making it easy to provide high density hybrid IC’s Collector-emitter voltage: 50V hFE: 200 - 400 Primary Competitive Advantages: Brand-name Parts Country of Origin Experienced ... |
Guangdong Kexin Industrial Co.,Ltd
Guangdong |
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Place of Origin:China Technical parameters: 1. Wafer Diameter: 100mm 2. Wafer thickness: 245¡ À 5¦ Ì m 3. Back Metal thickness: Ti 1000A+ Ni 4000A+ Ag 5000A 4. Front Metal thickness: pure Al 4.5¦ Ì m 5. Wafer surface passivation: Silicon Nitride 6000A 6. Scribe width: 60¦ Ì m 7... |
Dandong huaao electrics CO, LTD
Liaoning |
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Place of Origin:China Brand Name:DHA Model Number:BU941 die chip on wafer ...NPN Power Darlington Transistor Chip BU941Z Technical parameters: 1. Wafer Diameter: 100mm 2. Wafer thickness: 245±5μm 3. Back Metal thickness: Ti 1000A + Ni 4000A + Ag 5000A 4. Front Metal thickness: pure Al 4.5μm 5. Wafer surface passivation: Silicon Nitride 6000A 6. Scribe width: 60μm 7. Chip area: 4.7×4.7(mm) 8. Transistor... |
DANDONG HUAAO ELECTRONICS CO.,LTD
Liaoning |
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Brand Name:CviLux Model Number:MMBT3904 Place of Origin:china Key Specifications/Special Features: NPN general purpose switching transistor Voltage: 40V Power: 225mW Special features: NPN epitaxial silicon, planar design Collector-emitter voltage VeE: 40V Collector current Ie: 200mA Transition frequency fr >300MHz... |
CviLux Corporation
Taiwan |
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Place of Origin:China Brand Name:DHA Model Number:BU941 die chip on wafer ...NPN Power Darlington Transistor Chip BU941Z Technical parameters: 1. Wafer Diameter: 100mm 2. Wafer thickness: 245±5μm 3. Back Metal thickness: Ti 1000A + Ni 4000A + Ag 5000A 4. Front Metal thickness: pure Al 4.5μm 5. Wafer surface passivation: Silicon Nitride 6000A 6. Scribe width: 60μm 7. Chip area: 4.7×4.7(mm) 8. Transistor... |
Dandong Huaao Electronics Co.,Ltd.
Liaoning |
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Brand Name:Sinyork Model Number:BC817 SERIES Place of Origin:china Key Specifications/Special Features: Voltage: 45V Power: 225mW General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC: 500mA Pb-free product are available (99% Sn above can meets RoHS environment substance ... |
Sinyork Co Ltd
Taiwan |