high voltage switching transistor

Place of Origin:JAPAN

Brand Name:FUJITSU

Model Number:3DD5601I-O-I-N-B

... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ...

Model Number:BUX48A

Place of Origin:Guangdong, China

Brand Name:KAIGENG

BUX48A TO-3 Electronic Components IC MCU Microcontroller Integrated Circuits BUX48A #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:NXP USA Inc.

Model Number:PH2369

Place of Origin:CHINA

...Transistor NPN 15V 200mA 500MHz 500mW Through Hole TO-92-3 DESCRIPTION NPN switching transistor in a TO-92 FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching. Product Attributes Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage...

Brand Name:original

Model Number:TIP127

Place of Origin:original

...Transistors PNP Through Hole Power Darlington Low voltage complementary power Darlington transistors FEATURES • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Application • General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high...

Brand Name:MITSUBISHI

Model Number:QM75DY-H

Place of Origin:JAPAN

QM75DY-H MITSUBISHI TRANSISTOR MODULE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current.......................... 75A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain...............................75 • Insulated ...

Brand Name:IXYS

Model Number:IXYH30N450HV

IXYH30N450HV IGBT PT 4500 V 60 A 430 W Through Hole TO-247HV IXYS IXYT30N450HV & IXYH30N450HV XPT™ IGBTs IXYS IXYT30N450HV and IXYH30N450HV High-Voltage XPT™ IGBTs feature a 4.5kV maximum collector-emitter voltage and a 3.9V maximum collector-emitter ...

Model Number:FDS6699S

Place of Origin:America

Brand Name:Fairchild

... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A Number of Channels 1

Brand Name:Julun

Model Number:PG-TO 252-3

Place of Origin:CHINA

IPD70R1K4P7S Series 700V CoolMOS P7 Power Transistor Field Effect MOS Tube Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Excellent thermal behavior • Integrated ESD protection diode • Low switching losses (Eoss) • ...

Brand Name:FAIRCHILD

Model Number:MJD340TF

Place of Origin:Original

... Lead (I-PAK, “- I” Suffix) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3 V

Brand Name:Kexin, Kesenes

Place of Origin:China (mainland)

Model Number:2SC3736 SOT-89

Key Specifications/Special Features: High-speed and high voltage switching Low collector saturation voltage Collector-base voltage: 80V Primary Competitive Advantages: Brand-name Parts Country of Origin Experienced Staff Green Product Guarantee/Warranty ...

Brand Name:JC

Model Number:OSPF12N65C

Place of Origin:Jiangxi, China

...High Power Jfet Transistor , Npn Transistor Amplifier 650V Power Jfet Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness Low gate charge Low Rdson(typical 5.5mΩ) Fast switching Power Jfet Transistor Applications High efficiency switch mode power supplies Power factor correction Absolute Maximum Ratings (Tc=25°C) Symbol Parameters Ratings Unit VDSS Drain-Source Voltage

Brand Name:NXP

Model Number:BAV99

Place of Origin:Original Factory

BAV99 Fast switching speed Small Signal Switching Diode SOT-23 Dual in Series Description: The BAV99 is a Dual in Series SMD Diode package, meaning there will be two diodes connected in series inside a SMD package. The Diodes can be used for small signal ...

Brand Name:SILAN

Model Number:SVF840F

Place of Origin:CHINA

...high voltage MOS tube Description: SVF840F/D/S/MJ N-channel enhancement mode high voltage power MOS field effect transistor It is manufactured using Silan Microelectronics' F-Cell TM planar high voltage VDMOS process technology. advanced The technology and cell structure make the product have lower on-resistance and superior switching performance And high...

Brand Name:Ti

Model Number:FDT3612

FDT3612 Mosfet Power Transistor MOSFET 100V NCh PowerTrench General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers...

Place of Origin:Guangxi

Brand Name:GMSE

Model Number:MMBT3904

...switching transistor Universal switch SMD Transistor, anti-pressure large, leakage current, high-performance, --------- MMBT3904 SMD switching transistor is designed for use in various fields including: mobile communications, PCs, consumption electronic products, household equipments, and industry automatic control devices, etc. - MAXIMUM RATINGS Characteristic - Symbol - Rating - Unit - Collector-Emitter-Voltage...

Brand Name:Meridien

Place of Origin:China (mainland)

Model Number:3DD13001

Key Specifications/Special Features: Applications: Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit Features: High breakdown voltage High-current capability High switching speed High-...

Place of Origin:Taiwan

Brand Name:SR;NXP

... Free samples for testing FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: PMBT2222 and PMBT2222A.

Model Number:BJT100S

Place of Origin:china

Key Specifications/Special Features: Voltage: 200V Current: 2.5A Power: 30W Low switching losses Low reverse leakage currents Good high-temperature properties Right switching speed High reliabilities

Place of Origin:Taiwan

... Free sample sfor testing FEATURES • High current ( max. 600 mA) • Low voltage ( max. 60 V) . APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: PMBT2222 and PMBT2222A.

Brand Name:Frankever

Model Number:2SK2759

Place of Origin:china

Key Specifications/Special Features: High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS: ±30V guarantee Repetitive avalanche rated Primary Competitive Advantages: Packaging Quality Approvals Price Reputation ...