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Integrated Circuit Ic Dc Output Module Solid State Relay TLP523-4

Categories Electronics Components
Brand Name: Anterwell
Model Number: TLP523-4
Certification: new & original
Place of Origin: original factory
MOQ: 10pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 4800pcs
Delivery Time: 1 day
Packaging Details: Plesae contact me for details
Isolation voltage: 2500 (AC, 1min., R.H.≤ 60%) Vrms
Lead soldering temperature (10 s): 260 °C
Storage temperature range: -55~125 °C
Operating temperature range: -55~100 °C
Collector current: 150 mA
Emitter collector valtage: 0.3 V
Collector emitter voltage: 55 V
Reverse voltage: 5 V
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    Integrated Circuit Ic Dc Output Module Solid State Relay TLP523-4


    TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

    TLP523, TLP523−2, TLP523−4


    Programmable Controllers DC−Output Module Solid State Relay


    The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected, phototransistor which has an integral base−emitter resistor to optimize switching speed and elevated temperature characteristics.

    The TLP523−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP523−4 provide four isolated channels per package.


    * Current transfer ratio: 500% (min.) (IF = 1 mA)

    * Isolation voltage: 2500 Vrms (min.)

    * Collector−emitter voltage: 55 V (min.)

    * Leakage current: 10µA (max.) (Ta = 85°C)

    * UL recognized: UL1577, file no. E67349 Pin



    Pin Configurations (top view)


    Absolute Maximum Ratings (Ta = 25°C)

    CharacteristicSymbolRatingUnit
    TLP523

    TLP523−2

    TLP523-4

    LEDForward currentIF6050mA
    Forward current deratingΔIF / °C−0.7 (Ta ≥ 39°C)−0.5 (Ta ≥ 25°C)mA /°C
    Pulse forward currentIFP1 (100μs pulse, 100pps)A
    Reverse voltageVR5V
    DetectorCollector−emitter voltageVCEO55V
    Emitter−collector voltageVECO0.3V
    Collector currentIC150mA
    Collector power dissipation (1 circuit)PC150100mW

    Collector power dissipation derating

    (1 circuit Ta ≥ 25°C)

    ΔPC / °C-1.5-1.0mW /°C
    Storage temperature rangeTstg−55~100°C
    Operating temperature rangeTopr−55~125°C
    Lead soldering temperature(10s)Tsol260°C
    Total power dissipationPT250150mW

    Total power dissipation derating

    (Ta ≥ 25°C)

    ΔPT / °C-2.5-1.5mW / °C
    Isolation voltage (Note 1)BVS2500 (AC, 1min., R.H.≤ 60%)Vrms

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

    Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

    Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.


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